STK822 Datasheet | STMicroelectronics

N-channel 25 V - 0.00175 Ω - 38 A - Polar PAK® STrip FET™ Power MOSFET Features Type VDSS RDS(on) max RDS(on)- Qg PTOT STK822 25 V <0.00215 Ω 58 n C- mΩ 5.2 W - Ultra low top and bottom junction to case thermal resistance - Very low on resistance ) - 100% Rg tested t(s - Fully encapsulated die uc - 100% matte tin finish (in pliance with the d 2002/95/EC european directive) ro - Polar PAK® is a registered trademark of P VISHAY lete Application so - Switching applications Ob Description ) - This Power MOSFET is the latest development of t(s STMicroelectronics unique “single feature size” c strip-based process. The resulting transistor u shows extremely high packing density for low ond resistance, moreover the double sides cooling ro package with ultra low junction to case thermal P resistance allows to handle higher levels of te current. le Table 1. Device summary so Order code Marking Ob STK822 K822 Polar PAK® Figure 1. Internal schematic diagram Bottom View Top View Package Polar PAK® Packaging Tape & reel February...