Datasheet4U Logo Datasheet4U.com

STL13DP10F6 - Dual P-CHANNEL POWER MOSFET

Description

developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Features

  • 1 4 1 8 5 4 PowerFLAT™ 5x6 double island Figure 1. Internal schematic diagram Order code STL13DP10F6 VDS 100 V RDS(on) max. ID 0.18 Ω 3.3 A.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STL100N3LLH6 N-Channel Power MOSFET ST Microelectronics
STL100N3LLH7 Power MOSFETs N-channel 30V ST Microelectronics
STL100NH3LL N-CHANNEL Power MOSFET ST Microelectronics
STL120NH02V N-CHANNEL MOSFET ST Microelectronics
STL12S03F (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter Superworld Electronics

Other Datasheets by STMicroelectronics

Part Number Description
STL130N6F7 N-channel Power MOSFET
STL130N8F7 N-channel Power MOSFET
STL135N8F7AG N-channel Power MOSFET
STL13N60DM2 N-CHANNEL POWER MOSFET
STL13N60M6 N-channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
STL13DP10F6 Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet - production data Features 1 4 1 8 5 4 PowerFLAT™ 5x6 double island Figure 1. Internal schematic diagram Order code STL13DP10F6 VDS 100 V RDS(on) max. ID 0.18 Ω 3.3 A • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses Applications • Switching applications Description This device is a dual P-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order code STL13DP10F6 Table 1.
Published: |