STL13DP10F6 Datasheet Dual P-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

Datasheet Details

This device is a dual P-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Order code STL13DP10F6 Table 1.

STL13DP10F6 Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet - production.

1 4 1 8 5 4 PowerFLAT™ 5x6 double island Figure 1. Internal schematic diagram Order code STL13DP10F6 VDS 100 V RDS(on) max. ID 0.18 Ω 3.3 A.
RDS(on).
Qg industry benchmark.
Extremely low on-resistance RDS(on).
High avalanche ruggedness.
Low gate drive power losses.