STL13DP10F6 Datasheet | STMicroelectronics

Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island - production data Features 1 4 8 5 PowerFLAT™ 5x6 double island Figure 1. Internal schematic diagram Order code STL13DP10F6 VDS 100 V RDS(on) max. ID 0.18 Ω 3.3 A - RDS(on) - Qg industry benchmark - Extremely low on-resistance RDS(on) - High avalanche ruggedness - Low gate drive power losses Applications - Switching applications Description This device is a dual P-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in...