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STL13NM60N - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • 3 6  6  .
  •  %RWWRPYLHZ '  3RZHU)/$7Œ[+9 Order code VDS @ Tjmax STL13NM60N 650 V RDS(on) max. 0.385 Ω ID 10 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription

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STL13NM60N N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features 3 6  6  *  %RWWRPYLHZ '  3RZHU)/$7Œ[+9 Order code VDS @ Tjmax STL13NM60N 650 V RDS(on) max. 0.385 Ω ID 10 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Figure 1. Internal schematic diagram '  *  Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
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