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STL15N3LLH5 - N-channel Power MOSFET

General Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Table 1.

Key Features

  • Type STL15N3LLH5 VDSS 30V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL15N3LLH5 www.datasheet4u.com N-channel 30 V, 0.0045 Ω , 15 A, PowerFLAT™ (3.3 x 3.3) STripFET™ V Power MOSFET Preliminary Data Features Type STL15N3LLH5 VDSS 30V RDS(on) <0.0054Ω ID 15A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses PowerFLAT™(3.3x3.3) (Chip scale package) Applications ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.