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STL210N4LF7AG - N-Channel Power MOSFET

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General Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Product status link STL210N4LF7AG Product summary Order code STL210N4LF7AG Marking 210N4LF7 Package PowerFLAT™ 5x6 Packing Tape and reel DS12887 - Rev 3 - December 2019 For further information contact your local STMicroelectronics sales office.

www.st.com STL210N4LF7AG Electrical ratings 1 Electrical ratings Table 1.

Overview

STL210N4LF7AG Datasheet Automotive N-channel 40 V, 1.35 mΩ typ.

Key Features

  • Order code STL210N4LF7AG VDS 40 V RDS(on) max. 1.6 mΩ.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.
  • Wettable flank package ID 120 A G(4).

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