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STL325N4LF8AG - Automotive N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.

It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.

Key Features

  • Order code STL325N4LF8AG VDS 40 V.
  • AEC-Q101 qualified.
  • MSL1 grade.
  • 175 °C operating temperature.
  • 100% avalanche tested.
  • Wettable flank package RDS(on) max. 0.75 mΩ ID 373 A.

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Full PDF Text Transcription (Reference)

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STL325N4LF8AG Datasheet Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 4 3 2 1 PowerFLAT 5x6 D(5, 6, 7, 8) 8 76 5 Features Order code STL325N4LF8AG VDS 40 V • AEC-Q101 qualified • MSL1 grade • 175 °C operating temperature • 100% avalanche tested • Wettable flank package RDS(on) max. 0.75 mΩ ID 373 A Applications G(4) • Switching applications S(1, 2, 3) 12 34 Top View AM15540v2 Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.