STL38DN6F7AG Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. STL38DN6F7AG Electrical ratings 1 Electrical ratings Table 1. Drain current is limited by package, the current capability of the silicon is 33 A at 25 °C and 23 A at 100 °C.
STL38DN6F7AG Key Features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness