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STL38DN6F7AG - Automotive-grade N-channel Power MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code VDS RDS(on) max. ID STL38DN6F7AG 60 V 27 mΩ 10 A.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Datasheet preview – STL38DN6F7AG

Datasheet Details

Part number STL38DN6F7AG
Manufacturer STMicroelectronics
File Size 703.61 KB
Description Automotive-grade N-channel Power MOSFET
Datasheet download datasheet STL38DN6F7AG Datasheet
Additional preview pages of the STL38DN6F7AG datasheet.

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Full PDF Text Transcription

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STL38DN6F7AG Datasheet Automotive-grade N-channel 60 V, 24 mΩ typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package 1 S2 Drain on rear side 2 G2 8 D2 7 3 S1 4 G1 6 D1 5 Features Order code VDS RDS(on) max. ID STL38DN6F7AG 60 V 27 mΩ 10 A • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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