STMicroelectronics STL70N10F3
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.| Part No. | STL70N10F3 |
|---|---|
| Datasheet | STL70N10F3 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDSS STL70N10F3 100 V RDS(on) max @VGS=10V 0.0084 Ω ID PTOT 16 A 136 W● Improved die-to-footprint ratio
● Very low thermal resistance
● Low on-resistance
APPLICATIONS
● Switching applicationsDESCRIPTION
1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram $$$$ Table 1. Device summary Order code STL70N10F3 Marking 70N10F3 '333 "OTTOM 6IEW Package PowerFLAT™ 5x6 4OP 6IEW !- 6 Packaging Tape and reel May 2012 This is information on a product in full production. Doc ID 018794 Rev 3 1/17 17 Contents Contents STL70N10F3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
