STMicroelectronics STL70N2LLH5
N-channel 30V 18A Power MOSFET
FEATURES
Type VDSS RDS(on) max ID 8 STL70N2LLH5 30 V <0.0068 Ω 18 A (1) t(s) 1. This value is rated according to Rthj-pcb c● RDS(on) * Qg industry benchmark du
● Extremely low on-resistance RDS(on) ro
● Very low switching gate charge P
● High avalanche ruggedness te
● Low gate drive power losses ole
APPLICATIONS
bs● Switching applications ) - O
DESCRIPTION
t(s This device is an N-channel Power MOSFET c developed using STMicroelectronics’ du STripFET™V technology. The device has been ro optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in Obsolete P its class. 5 1 4 PowerFLAT™ ( 5x6 ) Figure 1. Internal schematic diagram $$$$ '333 "OTTOM 6IEW 4OP 6IEW !- 6 Table 1. Device summary Order code STL70N2LLH5 Marking 70N2LLH5 Package PowerFLAT™ (5x6) Packaging Tape and reel July 2011 Doc ID 018954 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 11 Contents Contents STL70N2LLH5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .