STL9P3LLH6 Datasheet | STMicroelectronics

P-channel -30 V, 12 mΩ typ., -9 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 3.3x3.3 package D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code -30 V - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss RDS(on) max 15 mΩ ID -9 A Applications - Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. AM01475v4 Product status STL9P3LLH6 Product summary Order code Marking 9P3L Package PowerFLAT™ 3.3x3.3 Packing Tape...