Download STN0214 Datasheet PDF
STMicroelectronics
STN0214
Features - High gain - Very high voltage capability Applications - Haptic - High voltage solenoid driving Description The device is an NPN power bipolar transistor manufactured using the latest high-voltage diffused collector technology. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram Table 1. Device summary Order code STN0214 Marking N0214 Package SOT-223 February 2012 Doc ID 022769 Rev 1 Packaging Tape and reel 1/7 .st. Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (t P < 5 ms) Base current Base peak current (t P < 1 ms) Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature Table 3. Thermal data Symbol Parameter Rthj-amb (1) Thermal resistance junction-ambient 1. When mounted on PCB area of 1 cm2, t...