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STN1NF10 Datasheet PDF

STMicroelectronics STN1NF10

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Part No. STN1NF10
Datasheet STN1NF10 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET
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STN1NF10 datasheet page 1 preview

DESCRIPTION

APPLICATIONS

s DC-DC CONVERTERS s DC MOTOR CONTROL (DISK DRIVERS, etc.) 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM(●) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 20 1 0.6 4 2.5 0.02 20 35 -55 to 150 (1) ISD ≤ 1A, di/dt ≤ 350A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX (2) Starting T j = 25 oC, ID = 1A, VDD = 70V Unit V V V A A A W W/°C V/ns mJ °C (●) Pulse width limited by safe operating area. October 2001 . 1/8 STN1NF10 THERMAL DATA Rthj-pcb Rthj-pcb Tl Thermal Resistance Junction-PCB(1 inch2 copper board) Thermal Resistance Junction-PCB (min. footprint) Maximum Lead Te...
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