STMicroelectronics STN2NE10L
N-Channel Power MOSFET
DESCRIPTION
du This Power MOSFET is the latest development of ro STMicroelectronics unique "Single Feature P Size™" strip-based process. The resulting transistor shows extremely high packing density te for low on-resistance, rugged avalanche le characteristics and less critical alignment steps o therefore a remarkable manufacturing bs reproducibility. Internal schematic diagram ct(s) - OAPPLICATIONS
du● Switching application Obsolete Pro Order codes Part number STN2NE10L Marking N2NE10L Package SOT-223 Packaging Tape & reel February 2007 Rev 5 1/12 12 Contents Contents STN2NE10L 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .