STMicroelectronics STN2NF06
This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™ ” stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STN2NF06 |
|---|---|
| Datasheet | STN2NF06 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
1 SOT-223 2APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (● ) P to t dv/dt( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction T emperature o o o Value 60 60 ± 20 2 1.8 8 2.5 0.02 6 -65 to 150 150 (1) ISD ≤ 8 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C (
●) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 July 1998 1/9 STN2NF06 THERMAL DATA R thj -pcb R t hj- amb Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted) Max...
