STMicroelectronics STN3N45K3
N-CHANNEL POWER MOSFET
FEATURES
4 3 2 1 SOT-223 Figure 1. Internal schematic diagram ' * 6 AM01476v1 Order code STN3N45K3 VDSS 450 V RDS(on) max <4Ω ID Pw 0.6 A 3 W● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Order code STN3N45K3 Table 1. Device summary Marking Package 3N45K3 SOT-223 Packaging Tape and reel