Datasheet4U.com

STN3NE06L Datasheet PDF

STMicroelectronics STN3NE06L

This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Part No. STN3NE06L
Datasheet STN3NE06L Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET
Buy Stock & Price
STN3NE06L datasheet page 1 preview

DESCRIPTION

APPLICATIONS

s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V DS V DGR V GS ID ID I DM (● ) Ptot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 60 60 ± 20 3 1.8 12 2.5 0.02 6 -65 to 150 150 (1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C (●) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 August 1998 1/5 STN3NE06L THERMAL DATA R thj-pcb R thj-amb Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted) Ma...
STN3NE06L page 2 preview STN3NE06L page 3 preview