STMicroelectronics STN3P10F6
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STN3P10F6 |
|---|---|
| Datasheet | STN3P10F6 Download |
| Manufacturer |  STMicroelectronics |
| Description | P-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STN3P10F6 -100 V 0.180 Ω -3 A● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) Int_schem_P_ch_nTnZ_SOT_223 Order code STN3P10F6 Table 1: Device summary Marking Package 3P10F6 SOT-223 Packing Tape and reel February 2018 DocID030857 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/13 Contents Contents STN3P10F6 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information .....................................................................
