STMicroelectronics STN3PF06
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.STN3PF06 Specifications
- Package : SOT-223
- Mount Type : Surface Mount
- Current Rating : -2.5A
- Threshold Voltage : 4V
- RDS(on) Max : 220mΩ
- Drain-Source Voltage : 60V
- Input Capacitance : 850pF
- Terminals : 4
- Rise Time : 40ns
- Fall Time : 17ns
- Max Power Dissipation : 2.5W
- Voltage Rating DC : -60V
- Termination : SMD/SMT
- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
FEATURES
Type STN3PF06 VDSS 60 V RDS(on) max < 0.22 Ω ID 2.5 A● Extremely dv/dt capability
● 100% avalanche tested
● Application oriented characterization Application
● Switching applications
DESCRIPTION
2 3 2 1 SOT-223 Figure 1. Internal schematic diagram Table 1. Device summary Order code STN3PF06 Marking N3PF06 Package SOT-223 Packaging Tape and reel March 2008 Rev 4 1/12 12 Contents Contents STN3PF06 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .