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STO33N60M6 - N-channel Power MOSFET

General Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

Key Features

  • Order code VDS RDS(on) max. ID STO33N60M6 600 V 125 mΩ 25 A.
  • Reduced switching losses.
  • Lower RDS(on) per area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.
  • Excellent switching performance thanks to the extra driving source pin.

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Full PDF Text Transcription for STO33N60M6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STO33N60M6. For precise diagrams, and layout, please refer to the original PDF.

STO33N60M6 Datasheet N-channel 600 V, 105 mΩ typ., 25 A, MDmesh M6 Power MOSFET in a TO‑LL package TO-LL type A Drain (TAB) Gate(1) Driver source (2) Power source (3, 4, ...

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O-LL type A Drain (TAB) Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7,8) N-chG1DS2PS345678DTABZ Product status link STO33N60M6 Product summary Order code STO33N60M6 Marking 33N60M6 Package TO-LL type A Packing Tape and reel Features Order code VDS RDS(on) max.

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