STMicroelectronics STP03D200
The STP03D200 is made by two extra high voltage NPN transistors in Darlington configuration housed in a single package. The resulting device shows high gain performance.| Part No. | STP03D200 |
|---|---|
| Datasheet | STP03D200 Download |
| Manufacturer |  STMicroelectronics |
| Description | 2kV NPN Darlington transistor |
| Buy | Stock & Price |
FEATURES
● Extra high voltage capability● High gain characteristic Application
● Active start-up network in 3 phase S.M.P.S. (see application note AN2454)
DESCRIPTION
The resulting device shows high gain performance. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram C (2, TAB) B (1) SC09020 E (3) Table 1. Device summary Order code STP03D200 Marking P03D200 Package TO-220 February 2010 Doc ID 14059 Rev 2 Packaging Tube 1/7 7 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case max STP03D200 Value 2000 1200 20 100 200 40 -65 to 150 150 Unit V V V mA mA W °C °C Value 3.13 Unit °C/W 2/7 Doc ID 14059 Rev 2 STP03D200 2 Electrical characteristics Electrical characteristics TCASE = 25 °C unless otherwise specified.
