STMicroelectronics STP100N6F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
FEATURES
Order code VDS RDS(on) max. ID PTOT STP100N6F7 60 V 5.6 mΩ 100A 125 W TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% *● Among the lowest RDS(on) on the market
● Excellent figure of merit (FoM)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
6 $0 Y Order code STP100N6F7 Table 1. Device summary Marking Package 100N6F7 TO-220 Packaging Tube December 2014 This is information on a product in full production. DocID027212 Rev 2 1/13 Contents Contents STP100N6F7 1 Electrical ratings . .