Datasheet Summary
N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ VI DeepGATE™
Power MOSFET in a TO-220 package
- production data
Features
3 2 1
TO-220
Order code STP105N3LL
VDS 30 V
RDS(on) max. ID 3.5 mΩ 150 A
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
Figure 1. Internal schematic diagram
'Ć7$%
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Applications
- Switching applications
Description
This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
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