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STP105N3LL - N-channel Power MOSFET

General Description

developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • TAB 3 2 1 TO-220 Order code STP105N3LL VDS 30 V RDS(on) max. ID 3.5 mΩ 150 A.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses Figure 1. Internal schematic diagram ' Ć7$% .
  •  .

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STP105N3LL N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet − production data Features TAB 3 2 1 TO-220 Order code STP105N3LL VDS 30 V RDS(on) max. ID 3.5 mΩ 150 A • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses Figure 1. Internal schematic diagram ' Ć7$% *  Applications • Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6  $0Y Order code STP105N3LL Table 1.