STMicroelectronics STP105N3LL
This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.FEATURES
TAB 3 2 1 TO-220 Order code STP105N3LL VDS 30 V RDS(on) max. ID 3.5 mΩ 150 A● RDS(on) * Qg industry benchmark
● Extremely low on-resistance RDS(on)
● High avalanche ruggedness
● Low gate drive power losses Figure 1. Internal schematic diagram ' Ć7$% *
APPLICATIONS
● Switching applicationsDESCRIPTION
6 $0 Y Order code STP105N3LL Table 1. Device summary Marking Packages 105N3LL TO-220 Packaging Tube April 2014 This is information on a product in full production. DocID023976 Rev 2 1/13 Contents Contents STP105N3LL 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .