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STP10N65K3 - N-channel Power MOSFET

General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Key Features

  • TAB 3 1 D2PAK 3 2 1 TO-220FP TAB I2PAKFP (TO-281) 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% Order codes STB10N65K3 STF10N65K3 STFI10N65K3 STP10N65K3 VDS RDS(on) max ID PTOT 150 W 650 V 1 Ω 10 A 35 W 150 W.
  • 100% avalanche tested.
  • Extremely low on-resistance RDS(on).
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.
  •  6  AM01476v1 App.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages Datasheet - production data Features TAB 3 1 D2PAK 3 2 1 TO-220FP TAB I2PAKFP (TO-281) 3 2 1 TO-220 Figure 1.