STMicroelectronics STP10N80K5
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 S(3) technology based on an innovative proprietary vertical structure. The result is a AM01476v1_tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STP10N80K5 |
|---|---|
| Datasheet | STP10N80K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 800V 9A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB TO-220 1 23 D(2, TAB) Order code VDS RDS(on) max. ID STP10N80K5 800 V 600 mΩ 9A● Very low FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONS
PTOT 130 W● Switching applications G(1)
DESCRIPTION
Product status STP10N80K5 Product summary Order code STP10N80K5 Marking 10N80K5 Package TO-220 Packing Tube DS12512 - Rev 2 - January 2026 For further information, contact your local STMicroelectronics sales office. STP10N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current pulsed PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness TJ Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD≤ 9 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS 3.
