STMicroelectronics STP10NB20
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/ dt capabilities and unrivalled gate charge and switching characteristics.| Part No. | STP10NB20 |
|---|---|
| Datasheet | STP10NB20 Download |
| Manufacturer |  STMicroelectronics |
| Description | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
Type STP10NB20 STP10NB20FP VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 10 A 6A STP10NB20 STP10NB20FP Figure 1. PackageFEATURES
SUMMARY● TYPICAL RDS(on) = 0.25 Ω
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● EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.APPLICATIONS
● HIGH CURRENT, HIGH SPEED SWITCHING●
● Figure 2. Internal Schematic Diagram SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE Table 2. Order Codes Part Number STP10NB20 STP10NB20FP Marking P10NB20 P10NB20FP Package TO-220 TO-220FP Packaging TUBE TUBE REV.2 April 2004 1/9 STP10NB20/FP Table 3.
ABSOLUTE MAXIMUM RATINGS
Value Symbol VDS VDGR VGS ID ID IDM (1) Ptot Parameter STP10NB20 Drain-source Voltage (VGS = 0) Drain-...
