STP10NB50 Datasheet PDF | STMicroelectronics

STMicroelectronics STP10NB50

The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Part No.	STP10NB50
Datasheet	STP10NB50 Download
Manufacturer	STMicroelectronics
Description	N-CHANNEL Power MOSFET
Buy	Stock & Price

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V DS V DGR V GS ID ID I DM (● ) P tot dv/dt( 1 ) VISO Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value STP10NB50 STP10NB50FP 500 500 ± 30 10.6 6.4 42.4 135 1.08 4.5  -65 to 150 150 ( 1) ISD ≤ 10.6 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,...