STMicroelectronics STP10NM60ND
N-channel Power MOSFET
| Part No. | STP10NM60ND |
|---|---|
| Datasheet | STP10NM60ND Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD10NM60ND STF10NM60ND STP10NM60ND VDS @ Tjmax. 650 V RDS(on) max. 0.60 Ω ID PTOT 70 W 8 A 25 W 70 W Figure 1: Internal schematic diagram D(2, TAB)● Fast-recovery body diode
● Low gate charge and input capacitance
● Low on-resistance RDS(on)
● 100% avalanche tested
● High dv/dt ruggedness
APPLICATIONS
● Switching applications G(1) S(3) Order code STD10NM60ND STF10NM60ND STP10NM60ND AM01475v1_noZenDESCRIPTION
These FDmesh™ II Power MOSFETs with fastrecovery body diode are produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, these devices feature low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Marking Package Packing DPAK Tape and reel 10N
