STP10NM60ND - N-channel Power MOSFET

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STMicroelectronics

Part number	STP10NM60ND
Manufacturer	STMicroelectronics
File Size	882.00 KB
Description	N-channel Power MOSFET
Datasheet	STP10NM60ND Datasheet
Additional preview pages of the STP10NM60ND datasheet.

These FDmesh™ II Power MOSFETs with fastrecovery body diode are produced using MDmesh™ II technology.

Utilizing a new striplayout vertical structure, these devices feature low on-resistance and superior switching performance.

They are ideal for bridge topologies and ZVS phase-shift converters.

Order code STD10NM60ND STF10NM60ND STP10NM60ND VDS @ Tjmax. 650 V RDS(on) max. 0.60 Ω ID PTOT 70 W 8 A 25 W 70 W Figure 1: Internal schematic diagram D(2, TAB).
Fast-recovery body diode.
Low gate charge and input capacitance.
Low on-resistance RDS(on).
100% avalanche tested.
High dv/dt ruggedness.

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Published: Jan 21, 2019 |