STP10NM60ND Datasheet | STMicroelectronics

STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 Ω typ., 8 A, FDmesh™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages - production data Features Order code STD10NM60ND STF10NM60ND STP10NM60ND VDS @ Tjmax. 650 V RDS(on) max. 0.60 Ω ID PTOT 70 W 8 A 25 W 70 W Figure 1: Internal schematic diagram D(2, TAB) - Fast-recovery body diode - Low gate charge and input capacitance - Low on-resistance RDS(on) - 100% avalanche tested - High dv/dt ruggedness Applications - Switching applications G(1) S(3) Order code STD10NM60ND STF10NM60ND STP10NM60ND AM01475v1_no Zen Description These FDmesh™ II Power MOSFETs with fastrecovery body diode are produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, these devices feature low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Marking Package...