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STP10NM60ND - N-channel Power MOSFET

General Description

These FDmesh™ II Power MOSFETs with fastrecovery body diode are produced using MDmesh™ II technology.

Utilizing a new striplayout vertical structure, these devices feature low on-resistance and superior switching performance.

They are ideal for bridge topologies and ZVS phase-shift converters.

Key Features

  • Order code STD10NM60ND STF10NM60ND STP10NM60ND VDS @ Tjmax. 650 V RDS(on) max. 0.60 Ω ID PTOT 70 W 8 A 25 W 70 W Figure 1: Internal schematic diagram D(2, TAB).
  • Fast-recovery body diode.
  • Low gate charge and input capacitance.
  • Low on-resistance RDS(on).
  • 100% avalanche tested.
  • High dv/dt ruggedness.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 Ω typ., 8 A, FDmesh™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features Order code STD10NM60ND STF10NM60ND STP10NM60ND VDS @ Tjmax. 650 V RDS(on) max. 0.60 Ω ID PTOT 70 W 8 A 25 W 70 W Figure 1: Internal schematic diagram D(2, TAB)  Fast-recovery body diode  Low gate charge and input capacitance  Low on-resistance RDS(on)  100% avalanche tested  High dv/dt ruggedness Applications  Switching applications G(1) S(3) Order code STD10NM60ND STF10NM60ND STP10NM60ND AM01475v1_noZen Description These FDmesh™ II Power MOSFETs with fastrecovery body diode are produced using MDmesh™ II technology.