STP110N10F7
STP110N10F7 is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
STF110N10F7, STP110N10F7
N-channel 100 V, 5.1 mΩ typ., 110 A, STrip FET™ VII Deep GATE™ Power MOSFETs in TO-220FP and TO-220 packages
- production data
Features
3 2 1
TO-220FP
3 2 1
TO-220
Order codes VDS RDS(on) max ID PTOT
STF110N10F7 100 V 0.007 Ω
45 A 30 W 110 A 150 W
- Ultra low on-resistance
- 100% avalanche tested
Applications
- Switching applications
Figure 1. Internal schematic diagram
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Description
These devices utilize the 7th generation of design rules of ST’s proprietary STrip FET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
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Order codes STF110N10F7 STP110N10F7
Table 1. Device summary
Marking
Package
110N10F7
TO-220FP TO-220
Packaging Tube
July...
