Datasheet4U Logo Datasheet4U.com

STP110N10F7 - N-CHANNEL POWER MOSFET

General Description

These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • TAB 3 2 1 TO-220FP 3 2 1 TO-220 Order codes VDS RDS(on) max ID PTOT STF110N10F7 100 V 0.007 Ω STP110N10F7 45 A 30 W 110 A 150 W.
  • Ultra low on-resistance.
  • 100% avalanche tested.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP110N10F7 N-Channel MOSFET INCHANGE
STP110N8F6 N-Channel MOSFET INCHANGE
STP110N8F7 N-Channel MOSFET INCHANGE
STP1117S12 1.0A Low Dropout Positive Adjustable or Fixed-Mode Regulator SeCoS
STP1117S18 1.0A Low Dropout Positive Adjustable or Fixed-Mode Regulator SeCoS

Other Datasheets by STMicroelectronics

Part Number Description
STP110N55F6 N-CHANNEL POWER MOSFET
STP110N7F6 N-CHANNEL POWER MOSFET
STP110N8F6 N-CHANNEL POWER MOSFET
STP110N8F7 N-channel Power MOSFET
STP11N60DM2 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features TAB 3 2 1 TO-220FP 3 2 1 TO-220 Order codes VDS RDS(on) max ID PTOT STF110N10F7 100 V 0.007 Ω STP110N10F7 45 A 30 W 110 A 150 W • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Figure 1. Internal schematic diagram ' 7$% Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. *  6  $0Y Order codes STF110N10F7 STP110N10F7 Table 1.