Datasheet Summary
N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package
- production data
Features
Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W
3 2 1
TO-220
Figure 1. Internal schematic diagram
'7$%
-
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
6
Order code STP110N7F6
$0Y
Table 1. Device summary
Marking
Package...