STMicroelectronics STP11NM50N
This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STP11NM50N |
|---|---|
| Datasheet | STP11NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STD11NM50N STF11NM50N STP11NM50N●
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● VDSS @TJmax RDS(on) max < 0.47 Ω ID 1 3 3 550 V 8.5 A DPAK 1 2 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220FP 3 1 2 Application Switching applications Figure 1. Internal schematic diagram
DESCRIPTION
These devices are made using the second generation of MDmesh™ technology. $ ' 3 !- V Table 1. Device summary Marking 11NM50N 11NM50N 11NM50N Package DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Order codes STD11NM50N STF11NM50N STP11NM50N November 2010 Doc ID 17156 Rev 3 1/16 16 Contents STD11NM50N, STF11NM50N, STP11NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits ..............................................
