Datasheet Summary
STD11NM50N STF11NM50N, STP11NM50N
N-channel 500 V, 0.4 Ω , 8.5 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220
Features
Order codes STD11NM50N STF11NM50N STP11NM50N
- -
- VDSS @TJmax
RDS(on) max < 0.47 Ω
550 V
8.5 A
DPAK
TO-220
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-220FP
3 1 2
Application
Switching applications Figure 1. Internal schematic diagram
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is...