STP11NM60N
Overview
This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
- Limited only by maximum temperature allowed * *
- 1 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel DPAK 1 2 TO-220FP
