STMicroelectronics STP11NM80
800V N-Channel Power MOSFET
| Part No. | STP11NM80 |
|---|---|
| Datasheet | STP11NM80 Download |
| Manufacturer |  STMicroelectronics |
| Description | 800V N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
2 3 1 D2PAK TAB 1 23 TO-220FP 123 I²PAK 123 TO-220 123 TO-247 Order code STB11NM80T4 STF11NM80 STI11NM80 STP11NM80 STW11NM80 VDS 800 V RDS(on) max. 400 mΩ ID 11 A D(2, TAB)● High dv/dt and avalanche capabilities
● Low input capacitance and gate charge
● Low gate input resistance
● 100% avalanche tested G(1)
APPLICATIONS
● Switching applications S(3) AM01475v1_noZenDESCRIPTION
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Product status links STB11NM80T4 STF11NM80 STI11NM80 STP11NM80 STW11NM80 DS3013 - Rev 12 - September 2025 For further information, contact your local STMicroelectronics sales office.
