STMicroelectronics STP12N120K5
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STP12N120K5 |
|---|---|
| Datasheet | STP12N120K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 1200V 12A Power MOSFET |
| Buy | Stock & Price |
FEATURES
2 3 1 H2PA K -2 3 12 TO-247 D(TAB) 3 12 TO-220 1 23 TO-247 long leads D(2, TAB) Order codes VDS STH12N120K5-2 STP12N120K5 STW12N120K5 1200 V STWA12N120K5● Very low FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected RDS(on) max. 690 mΩ ID 12 A G(1) G(1)
APPLICATIONS
● Switching applications S(2, 3) (H 2PAK-2) S(3)DESCRIPTION
( TO-220, TO-247 and TO-247 long leads) AM15557v3 These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. Product status links STH12N120K5-2 STP12N120K5 STW12N120K5 STWA12N120K5 DS8621 - Rev 5 - March 2025 For further information, contact your local STMicroelectronics sales office. STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C I...
