STMicroelectronics STP12N60M2
This device is an N-channel Power MOSFET developed using MDmesh M2 AM01476v1_tab technology.| Part No. | STP12N60M2 |
|---|---|
| Datasheet | STP12N60M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 9A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Order code VDS RDS(on) max. ID STP12N60M2 600 V 450 mΩ 9A TO-220 1 23 D(2, TAB)● Extremely low gate charge
● Excellent output capacitance (COSS) profile
● Very low turn-off switching losses
● 100% avalanche tested
● Zener-protected
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STP12N60M2 Product summary Order code STP12N60M2 Marking 12N60M2 Package TO-220 Packing Tube DS11071 - Rev 2 - February 2026 For further information, contact your local STMicroelectronics sales office. STP12N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain curr...
