STMicroelectronics STP12N65M5
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.| Part No. | STP12N65M5 |
|---|---|
| Datasheet | STP12N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS @ TJ max. RDS(on) max. STF12N65M5 STP12N65M5 710 V 430 mΩ● Extremely low RDS(on)
● Low gate charge and input capacitance
● Excellent switching performance
● 100% avalanche tested ID 8.5 A G(1) S(3)
APPLICATIONS
● Switching applications AM01475v1_noZenDESCRIPTION
Product status links STF12N65M5 STP12N65M5 Product summary Order code STF12N65M5 Marking 12N65M5 Package TO-220FP Packing Tube Order code STP12N65M5 Marking 12N65M5 Package TO-220 Packing Tube DS6117 - Rev 6 - March 2022 For further information contact your local STMicroelectronics sales office. STF12N65M5, STP12N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.) EAS Sin...
