STMicroelectronics STP12NK60Z
N-CHANNEL MOSFET
FEATURES
Type VDSS RDS(on) (@Tjmax) max ID PW STP12NK60Z STF12NK60Z STW12NK60Z 650 V 650 V 650 V <0.640 Ω 10 A 150 W <0.640 Ω 10 A 35 W <0.640 Ω 10 A 150 W● Extremely high dv/dt capability
● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitances
● Very good manufacturing repeatability Application
● Switching applications
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs. Table 1. Device summary Order codes Marking STP12NK60Z STF12NK60Z STW12NK60Z P12NK60Z F12NK60Z W12NK60Z 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2) G(1) Package TO-220 TO-220FP TO-247 S(3) AM01476v1 Packaging Tube Tube Tube October 2009 Doc ID 11324 Rev 7...