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STP130N8F7
N-channel 80 V, 5.0 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package
Datasheet - production data
TAB
TO-220
1 23
Figure 1: Internal schematic diagram D(2, TAB)
G(1)
Features
Order code STP130N8F7
VDS 80 V
RDS(on) max. 5.8 mΩ
ID 80 A
PTOT 205 W
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STP130N8F7 Datasheet
