STMicroelectronics STP130N8F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.FEATURES
Order code STP130N8F7 VDS 80 V RDS(on) max. 5.8 mΩ ID 80 A PTOT 205 W● Among the lowest RDS(on) on the market
● Excellent FoM (figure of merit)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) Order code STP130N8F7 AM01475v1_noZen Table 1: Device summary Marking Package 130N8F7 TO-220 Packing Tube March 2017 DocID027247 Rev 2 This is information on a product in full production. 1/13 Contents Contents STP130N8F7 1 Electrical rat