STMicroelectronics STP130NH02L
The STB_P130NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents.| Part No. | STP130NH02L |
|---|---|
| Datasheet | STP130NH02L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
TYPE STB130NH02L STP130NH02L●
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● STB130NH02L STP130NH02L Figure 1:Package RDS(on) < 0.0044 Ω < 0.0044 Ω ID 90 A(2) 90 A(2) VDSS 24 V 24 V TYPICAL RDS(on) = 0.0034 Ω @ 10 V TYPICAL RDS(on) = 0.005 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) 3 1 3 1 2 D2PAK TO-263 (Suffix “T4”) TO-220
DESCRIPTION
Figure 2: Internal Schematic DiagramAPPLICATIONS
● SYNCHRONOUS RECTIFICATIONS FOR TELECOM AND COMPUTER● OR-ING DIODE Table 2: Ordering Information SALES TYPE STB130NH02LT4 STP130NH02L MARKING B130NH02L P130NH02L PACKAGE TO-263 TO-220 PACKAGING TAPE & REEL TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol Vspike(1) VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (4) Tstg Tj April 2005 Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (co...
