STMicroelectronics STP130NS04ZB
This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also recommended.| Part No. | STP130NS04ZB |
|---|---|
| Datasheet | STP130NS04ZB Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
TYPE STP130NS04ZB STB130NS04ZB STW130NS04ZB s s s s Figure 1: Package RDS(on) < 9 mΩ < 9 mΩ < 9 mΩ ID 80 A 80 A 80 A 3 3 1 2 VDSS CLAMPED CLAMPED CLAMPED TYPICAL RDS(on) = 7 mΩ 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175°C MAXIMUM JUNCTION TEMPERATURE 1 TO-220 D²PAKDESCRIPTION
3 2 1 TO-247 Figure 2: Internal Schematic DiagramAPPLICATIONS
s HIGH SWITCHING CURRENT s LINEARAPPLICATIONS
Table 2: Order Codes Sales Type STP130NS04ZB STB130NS04ZBT4 STW130NS04ZB Marking P130NS04ZB B130NS04ZB W130NS04ZB Package TO-220 D²PAK TO-247 Packaging TUBE TAPE & REEL TUBE Rev. 2 February 2005 1/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Table 3: Absolute Maximum ratings Symbol VDS VDG VGS ID ID IDG IGS IDM ( ) PTOT VESD(G-S) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Gate Current (continuous) Gate Source Current (continuous) Drain Curren...
