Datasheet4U Logo Datasheet4U.com

STP14N80K5 - N-channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code STP14N80K5 VDS 800 V RDS(on) max. 0.445 Ω ID 12 A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP14NF06 N-CHANNEL Power MOSFET ST Microelectronics
STP14NF10 N-CHANNEL Power MOSFET ST Microelectronics
STP14NF12 N-CHANNEL Power MOSFET ST Microelectronics
STP14NF12FP N-CHANNEL Power MOSFET ST Microelectronics
STP14NK50Z N-CHANNEL Power MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP14NF10FP N-CHANNEL Power MOSFET
STP14NM65N N-channel Power MOSFET
STP140N10F4 Power MOSFET
STP140N4F6 N-Channel Power MOSFET
STP140N6F7 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP14N80K5 N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STP14N80K5 VDS 800 V RDS(on) max. 0.445 Ω ID 12 A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.