DESCRIPTION
It is also intended for any application with low gate charge drive requirements INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) EAS (2) VISO Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -55 to 175 (1) ISD ≤14A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (2) Starting Tj = 25°C, ID = 14A, VDD = 50V Value STP14NF12 120 120 ±20 14 9 56 60 0.4 9 60 2500 8.5 6 34 25 0.17 STP14NF12FP Unit V V V A A A W W/°C V/ns mJ V °C (q ) Pulse width limited by safe operating area August 2002 1/9 STP14NF12/STP14NF12FP...
STMicroelectronics
