Datasheet Summary
STI150N10F7, STP150N10F7
N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFETs in I2PAK and TO-220 packages
- production data
I2PAK
3 2 1
TO-220
Features
Order codes STI150N10F7 STP150N10F7
VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Figure 1. Internal schematic diagram
'7$%
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Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing...
