STMicroelectronics STP150N10F7
This is information on a product in full production.| Part No. | STP150N10F7 |
|---|---|
| Datasheet | STP150N10F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STI150N10F7 STP150N10F7 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W● Among the lowest RDS(on) on the market
● Excellent figure of merit (FoM)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applications Figure 1. Internal schematic diagram ' 7$% *DESCRIPTION
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0 Y Order codes STI150N10F7 STP150N10F7 Table 1. Device summary Marking Package 150N10F7 I2PAK TO-220 August 2014 DocID024552 Rev 4 Pa
