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STP150N10F7 - N-CHANNEL POWER MOSFET

General Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order codes STI150N10F7 STP150N10F7 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STI150N10F7, STP150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFETs in I2PAK and TO-220 packages Datasheet − production data TAB TAB 123 I2PAK 3 2 1 TO-220 Features Order codes STI150N10F7 STP150N10F7 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Figure 1. Internal schematic diagram ' 7$% *  Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.