STMicroelectronics STP150N10F7AG
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STP150N10F7AG |
|---|---|
| Datasheet | STP150N10F7AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Order code VDS RDS(on) max. ID STP150N10F7AG 100 V 4.2 mΩ 110 A TO-220 1 23 D(2, TAB)● Designed for automotive application
● Standard level VGS(TH)
● 175°C junction temperature
● 100% avalanche rated
APPLICATIONS
● Switching applications G(1) S(3) AM01475v1_noZenDESCRIPTION
Product status link STP150N10F7AG Product summary Order code STP150N10F7AG Marking 150N10F7AG Package TO-220 Packing Tube DS13798 - Rev 2 - March 2023 For further information contact your local STMicroelectronics sales office. STP150N10F7AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAV Single pulse avalanche current (pulse width limited by maximum junction temperature) Single pulse avalanche energy EAS (TJ = 25 °C, ID = IAV, VDD = 25 V) TJ Operating junction temperature range Tstg Storage temperature range 1.
