STP150N10F7AG Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. STP150N10F7AG Electrical ratings 1 Electrical ratings Table 1. ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25...
STP150N10F7AG Key Features
- Designed for automotive application
- Standard level VGS(TH)
- 175°C junction temperature
- 100% avalanche rated