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STP150N10F7AG - Automotive N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • TAB Order code VDS RDS(on) max. ID STP150N10F7AG 100 V 4.2 mΩ 110 A TO-220 1 23 D(2, TAB).
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP150N10F7AG Datasheet Automotive N-channel 100 V, 3.6 mΩ typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package Features TAB Order code VDS RDS(on) max. ID STP150N10F7AG 100 V 4.2 mΩ 110 A TO-220 1 23 D(2, TAB) • Designed for automotive application • Standard level VGS(TH) • 175°C junction temperature • 100% avalanche rated Applications • Switching applications G(1) S(3) AM01475v1_noZen Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.