STP15N06L datasheet by STMicroelectronics.
| Part number | STP15N06L |
|---|---|
| Datasheet | STP15N06L_STMicroelectronics.pdf |
| File Size | 215.38 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 15 V T c = 125 oC ON (∗ ) Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current Test Conditions ID = 250 µ A T c = 100 o C 15 Min. 2.5 0.15 0.3 Unit V Ω Ω A V GS = 5 V I D = 7.5 A V GS =...
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