STMicroelectronics STP15N65M5
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative AM01475v1_TAB vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.| Part No. | STP15N65M5 |
|---|---|
| Datasheet | STP15N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 11A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB TO-220 1 23 D(2, TAB) Order code STP15N65M5 VDS 650 V RDS(on) max. 340 mΩ ID 11 A● Higher VDSS rating
● Higher dv/dt capability
● Excellent switching performance
● Extremely low RDS(on)
● 100% avalanche tested
APPLICATIONS
● Switching applications G(1)DESCRIPTION
S(3) Product status link STP15N65M5 Product summary Order code STP15N65M5 Marking 15N65M5 Package TO-220 Packing Tube DS8919 - Rev 3 - February 2026 For further information, contact your local STMicroelectronics sales office. STP15N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 400 A/μs; VDS (peak) < V(BR)DSS, VDD = 400 V.
