STMicroelectronics STP15N95K5
The AM01476v1_tab result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STP15N95K5 |
|---|---|
| Datasheet | STP15N95K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 950V 12A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STF15N95K5 STP15N95K5 STW15N95K5 VDS 950 V● Ultra-low gate charge
● Very low FoM (figure of merit)
● Zener-protected
● 100% avalanche tested
APPLICATIONS
RDS(on) max. 500 mΩ ID 12 A● Switching applications G(1)
DESCRIPTION
These very high voltage N-channel Power MOSFETs are designed using S(3) MDmesh K5 technology based on an innovative proprietary vertical structure. Product status link STF15N95K5 STP15N95K5 STW15N95K5 DS9942 - Rev 3 - January 2026 For further information, contact your local STMicroelectronics sales office. STF15N95K5, STP15N95K5, STW15N95K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source human body model (R = 1,5 kΩ, C = 100 pF) VISO Insulation withstand voltage (RMS) from all three leads to external heat si...
