STP18N55M5 Description
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative S(3) vertical process technology bined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly AM01475v1_noZen suitable for applications requiring high power and superior efficiency. STP18N55M5 Electrical ratings 1 Electrical ratings Table.
STP18N55M5 Key Features
- Extremely low RDS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested