STMicroelectronics STP20N60M2-EP
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.FEATURES
Order code VDS RDS(on) max. STB20N60M2-EP 600 V 0.278 Ω● Extremely low gate charge
● Excellent output capacitance (COSS) profile
● Very low turn-off switching losses
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applications● Tailored for very high frequency converters (f > 150 kHz) ID 13 A S(3) AM01475V1 Product status link STP20N60M2-EP Product summary Order code STP20N60M2-EP Marking 20N60M2EP Package TO-220 Packing Tube
DESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency c