STMicroelectronics STP20NE06L
This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STP20NE06L |
|---|---|
| Datasheet | STP20NE06L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Value STP20NE06 V DS V DGR V GS ID ID I DM (● ) P tot V ISO dv/dt T s tg Tj April 1999 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junct ion T emperature o o o Unit ST P20NE06F P 60 60 ± 20 V V V 13 9 80 30 0.2 2000 7 A A A W W /o C V V/ns o o 20 14 80 70 0.47 -65 to 175 175 C C 1/9 (●) Pulse width limited by safe operating area ( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX STP20NE06L/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 2.14 62.
