DESCRIPTION
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s ORDERING INFORMATION SALES TYPE STP20NK50Z STW20NK50Z MARKING P20NK50Z W20NK50Z PACKAGE TO-220 TO-247 PACKAGING TUBE TUBE July 2003 1/7 STP20NK50Z - STW20NK50Z ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter STP20NK50Z Value STW20NK50Z Unit V V V 20 10 64 190 1.51 A A A W W/°C V V/ns °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM...
STMicroelectronics
